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2SD350 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD350
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD350 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD350
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·
High Switching Speed
·
Wide Area of Safe Operation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in horizontal deflection circuits of
color TV receivers and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
ICM
Collector Current-Peak
8
A
PC
Collector Power Dissipation
@ TC=90℃
35
W
TJ
Junction Temperature
130
℃
Tstg
Storage Temperature Range
-65~130
℃


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