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2SD556 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD556 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD556 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) · Wide Area of Safe Operation · High Power · High Current Capability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 20 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
Número de pieza similar - 2SD556 |
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Descripción similar - 2SD556 |
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