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2SC3677 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC3677
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3677 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC3677
DESCRIPTION
·
Low Collector Saturation Voltage
·
High breakdown voltage
·
Good Linearity of hFE
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High voltage amplifier
·
High-voltage switching applications
·
Dynamis focus applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
6
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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