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LM747 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
No. de pieza LM747
Descripción Electrónicos  Dual Operational Amplifier
PDF  8 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM747 Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Electrical Characteristics (Note 3) (Continued)
Parameter
Conditions
LM747ALM747E
LM747
LM747C
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VS e g20V to VS e g5V
Rejection Ratio
RS s 50X
86
96
dB
RS s 10 kX
77
96
77
96
Transient Response
TA e 25 C Unity Gain
Rise Time
025
08
03
03
m
s
Overshoot
60
20
5
5
%
Bandwidth (Note 4)
TA e 25 C
0437
15
MHz
Slew Rate
TA e 25 C Unity Gain
03
07
05
05
V ms
Supply CurrentAmp
TA e 25 C
25
17
28
17
28
mA
Power ConsumptionAmp
TA e 25 C
VS e g20V
80
150
mW
VS e g15V
50
85
50
85
LM747A
VS e g20V
TA e TAMIN
165
mW
TA e TAMAX
135
LM747E
VS e g20V
150
TA e TAMIN
150
mW
TA e TAMAX
150
LM747
VS e g15V
TA e TAMIN
60
100
mW
TA e TAMAX
45
75
Note 1
The maximum junction temperature of the LM747CLM747E is 100 C For operating at elevated temperatures devies in the TO-5 package must be
derated based on a thermal resistance of 150 CW junction to ambient or 45 CW junction to case The thermal resistance of the dual-in-line package is 100 C
W junction to ambient
Note 2
For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltage
Note 3
These specifications apply for g5V s VS s g20V and b55 C s TA s 125 C for the LM747A and 0 C s TA s 70 C for the LM747E unless otherwise
specified The LM747 and LM747C are specified for VS e g15V and b55 C s TA s 125 C and 0 C s TA s 70 C respectively unless otherwise specified
Note 4
Calculated value from 035Rise Time (ms)
Schematic Diagram (Each Amplifier)
TLH11479 – 1
Note
Numbers in parentheses are pin numbers for amplifier B DIP only
3



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