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BGS67 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BGS67
Descripción Electrónicos  65 MHz, 25.5 dB gain reverse amplifier
PDF  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGS67 Datasheet(HTML) 2 Page - NXP Semiconductors

  BGS67 Datasheet HTML 1Page - NXP Semiconductors BGS67 Datasheet HTML 2Page - NXP Semiconductors BGS67 Datasheet HTML 3Page - NXP Semiconductors BGS67 Datasheet HTML 4Page - NXP Semiconductors BGS67 Datasheet HTML 5Page - NXP Semiconductors BGS67 Datasheet HTML 6Page - NXP Semiconductors BGS67 Datasheet HTML 7Page - NXP Semiconductors BGS67 Datasheet HTML 8Page - NXP Semiconductors  
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2002 Sep 06
2
Philips Semiconductors
Product specification
65 MHz, 25.5 dB gain reverse amplifier
BGS67A
FEATURES
• Extremely low noise
• Excellent linearity
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Reverse amplifier in two-way CATV systems in the
5 to 65 MHz frequency range.
DESCRIPTION
The BGS67A is a hybrid high dynamic range amplifier
module in a leadless SOT567A package, operating at a
supply voltage of 12 V.
PINNING - SOT567A
PIN
DESCRIPTION
1
input
2
common
3
provision
4+VB
5
output
6
provision
7
common
8+VB
Bottom view
MBL432
12
34
8765
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 10 MHz
25
26
dB
Itot
total current consumption (DC)
VB = 12 V
75
95
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
55
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C



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