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LP3981 Datasheet(PDF) 8 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
No. de pieza LP3981
Descripción Electrónicos  Micropower, 300mA Ultra Low-Dropout CMOS Voltage
PDF  11 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LP3981 Datasheet(HTML) 8 Page - National Semiconductor (TI)

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Typical Performance Characteristics Unless otherwise specified, C
IN =COUT = 2.2 µF Ceramic,
CBP = 0.033 µF, VIN =VOUT + 0.5V, TA = 25˚C, Enable pin is tied to VIN. (Continued)
Line Transient Response
(V
IN =VOUT +1VtoVOUT + 1.6V)
Line Transient Response
(V
IN =VOUT +1VtoVOUT + 1.6V)
20020326
20020327
Line Transient Response
(V
IN =VOUT +1VtoVOUT + 1.6V)
Line Transient Response
(V
IN =VOUT +1VtoVOUT + 1.6V)
20020328
20020329
Enable Response (T
ON)
Enable Response (T
ON)
20020330
20020331
Application Hints
POWER DISSIPATION AND DEVICE OPERATION
The permissible power dissipation for any package is a
measure of the capability of the device to pass heat from the
power source, the junctions of the IC, to the ultimate heat
sink, the ambient environment. Thus, the power dissipation
is dependant on the ambient temperature and the thermal
resistance across the various interfaces between the die and
ambient air.
As stated in notes 3 and 5 in the electrical specifications
sections, the allowable power dissipation for the device in a
given package can be calculated using the equation:
With a
θ
JA = 50˚C/W, the device in theLLP package returns
a value of 2.0W with a maximum junction temperature of
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