TC2014 datasheet(7/18 Pages) MICROCHIP

No. de pieza	TC2014

Descripción Electrónicos	50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

PDF	18 Pages

Scroll/Zoom	100%

Fabricante Electrónico	MICROCHIP [Microchip Technology]

Página de inicio	http://www.microchip.com

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7 / 18 page

 2003 Microchip Technology Inc.

DS21662C-page 7

TC2014/2015/2185

Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.

FIGURE 2-19:

Line Transient Response.

(COUT = 1 µF).

FIGURE 2-20:

Load Transient Response in

Dropout. (COUT = 10 µF).

FIGURE 2-21:

Shutdown Delay Time.

FIGURE 2-22:

Wake-Up Response.

FIGURE 2-23:

PSRR vs. Frequency

(COUT = 1 µF Ceramic).

FIGURE 2-24:

PSRR vs. Frequency

(COUT = 10 µF Ceramic).

100mA

150mA

VOUT

100mV/DIV

VIN = 3.105V

VOUT = 3.006V

CIN = 1 µF Ceramic

COUT = 10 µF Ceramic

RLOAD = 20 Ω

-70

-60

-50

-40

-30

-20

-10

100

1000

10000 100000 100000

Frequency (Hz)

VIN = 4.0V

VINAC = 100 mV

VOUTDC = 3.0V

COUT = 1µF Ceramic

CBYPASS = 0.01 µF Ceramic

IOUT = 50 mA

IOUT = 150 mA

IOUT = 100 mA

100

10k

100k

-70

-60

-50

-40

-30

-20

-10

100

1000

10000 100000 100000

Frequency (Hz)

VIN = 4.0V

VINAC = 100 mV

VOUTDC = 3.0V

COUT = 10 µF Ceramic

CBYPASS = 0.01 µF Ceramic

IOUT = 150 mA

IOUT = 100 mA

100

10k

100k

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