IXFN27N80Q datasheet(1/2 Pages) IXYS

No. de pieza	IXFN27N80Q

Descripción Electrónicos	HiPerFET Power MOSFETs Q-Class

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Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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D

S

G

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

• Internationalstandardpackage

• Epoxy meet

UL94V-0, flammability classification

• miniBLOCwithAluminiumnitride

isolation

• IXYS advanced low Q

g process

• Ruggedpolysilicongatecellstructure

• UnclampedInductiveSwitching(UIS)

rated

• Lowpackageinductance

• FastintrinsicRectifier

Applications

• DC-DC converters

• Batterychargers

• Switched-modeandresonant-mode

power supplies

• DC choppers

• Temperatureandlightingcontrols

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250 µA

800

V

GH(th)

V

DS

= V

GS, ID = 4 mA

2.5

4.5

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C

100

µA

V

GS

= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5

I

D25

0.32

Ω

Note 1

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C27

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

108

A

I

AR

27

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C

2.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

520

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminalconnectiontorque

1.5/13 Nm/lb.in.

Weight

30

g

98813 (04/01)

HiPerFETTM

Power MOSFETs

Q-Class

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Preliminary data sheet

IXFN 27N80Q

V

DSS

= 800

V

I

D25

=

27

A

R

DS(on)

= 320 m

Ω

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