NVJS3151P datasheet(4/5 Pages) ONSEMI

4 / 5 page

NTJS3151P, NVJS3151P

www.onsemi.com

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VGS = 0 V

1600

600

400

200

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Qg, TOTAL GATE CHARGE (nC)

TJ = 25°C

Coss

Ciss

Crss

ID = −3.3 A

TJ = 25°C

1000

100

RG, GATE RESISTANCE (OHMS)

VDD = −6.0 V

ID = −1.0 A

VGS = −4.5 V

800

4.5

td(off)

td(on)

0.6

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

0.7

0.1

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1400

810

10000

0.2

0.5

0.3

0.4

1200

3.5

2.5

1.5

0.5

0.8

0.9

ORDERING INFORMATION

Device

Marking

Package

Shipping†

NTJS3151PT1G

SC−88

(Pb−Free)

3000 / Tape & Reel

NTJS3151PT2G

NVJS3151PT1G*

VTJ

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

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