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STM32L151x8 Datasheet(PDF) 82 Page - STMicroelectronics

No. de pieza STM32L151x8
Descripción Electrónicos  Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC
PDF  133 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L151x8 Datasheet(HTML) 82 Page - STMicroelectronics

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Electrical characteristics
STM32L151x6/8/B STM32L152x6/8/B
82/133
DocID17659 Rev 12
6.3.13
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 42 are derived from tests
performed under conditions summarized in Table 13. All I/Os are CMOS and TTL compliant.
Table 42. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
-
-
-
-
0.3VDD(1)
V
VIH
Input high level voltage
Standard I/O
0.7 VDD
--
FT I/O
-
-
Vhys
I/O Schmitt trigger voltage
hysteresis(2)
Standard I/O
-
10% VDD(3)
-
FT I/O
-
5% VDD(4)
-
Ilkg
Input leakage current (5)
VSS VIN VDD
I/Os with LCD
--
±50
nA
VSS VIN VDD
I/Os with analog
switches
--
±50
VSS VIN VDD
I/Os with analog
switches and LCD
--
±50
VSS VIN VDD
I/Os with USB
--
TBD
FT I/O
VDD VIN 5V
--
TBD
VSS VIN VDD
Standard I/Os
--
±50
RPU
Weak pull-up equivalent resistor(6)(1)
VIN = VSS
30
45
60
k
Ω
RPD
Weak pull-down equivalent resistor(6)
VIN = VDD
30
45
60
k
Ω
CIO
I/O pin capacitance
-
-
-
5
-
pF
1. Tested in production
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization.
3. With a minimum of 200 mV. Based on characterization results.
4. With a minimum of 100 mV. Based on characterization results.
5. The max. value may be exceeded if negative current is injected on adjacent pins.
6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).



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