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STM32F303VB Datasheet(PDF) 79 Page - STMicroelectronics

No. de pieza STM32F303VB
Descripción Electrónicos  ARM®-based Cortex®-M4 32b MCUFPU, up to 256KB Flash 48KB SRAM, 4 ADCs, 2 DAC ch., 7 comp, 4 PGA, timers, 2.0-3.6 V
PDF  148 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F303VB Datasheet(HTML) 79 Page - STMicroelectronics

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STM32F303xB STM32F303xC
Electrical characteristics
124
Figure 17. Typical application with a 32.768 kHz crystal
Note:
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
6.3.8
Internal clock source characteristics
The parameters given in Table 44 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24.
High-speed internal (HSI) RC oscillator
Table 44. HSI oscillator characteristics(1)
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
8
-
MHz
TRIM
HSI user trimming step
-
-
-
1(2)
2. Guaranteed by design.
%
DuCy(HSI)
Duty cycle
-
45(2)
-55(2)
%
ACCHSI
Accuracy of the HSI oscillator
TA = -40 to
105°C
-2.8(3)
3. Guaranteed by characterization results.
-3.8(3)
%
TA = -10 to 85°C -1.9(3)
-2.3(3)
TA = 0 to 85°C
-1.9(3)
-2(3)
TA = 0 to 70°C
-1.3(3)
-2(3)
TA = 0 to 55°C
-1(3)
-2(3)
TA = 25°C(4)
4. Factory calibrated, parts not soldered.
-1
-
1
tsu(HSI)
HSI oscillator startup time
-
1(2)
-2(2)
µs
IDDA(HSI)
HSI oscillator power
consumption
-
-
80
100(2)
µA



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