STB100NF04T4 datasheet(1/20 Pages) STMICROELECTRONICS

No. de pieza	STB100NF04T4

Descripción Electrónicos	AEC-Q101 qualified

PDF	20 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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November 2016

DocID9969 Rev 7

1/20

This is information on a product in full production.

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STB100NF04T4, STP100NF04

Automotive-grade N-

channel 40 V, 4.3 mΩ typ., 120 A

STripFET™ II Power MOSFET in a D²PAK and TO-220

packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)

max.

ID

Ptot

STB100NF04T4

40 V

4.6 mΩ

120 A

300 W

STP100NF04

40 V

4.6 mΩ

120 A

300 W



AEC-Q101 qualified



Exceptional dv/dt capability



100% avalanche tested



Low gate charge

Applications



Switching applications

Description

These Power MOSFETs have been developed

using ST

Microelectronics’ unique STripFET

process, which is specifically designed to

minimize input capacitance and gate charge. This

renders the devices suitable for use as primary

switch in advanced high-efficiency isolated DC-

DC converters for telecom and computer

applications, and applications with low gate

charge driving requirements.

Table 1: Device summary

Order code

Marking

Package

Packing

STB100NF04T4

B100NF04

D²PAK

Tape and reel

STP100NF04

P100NF04

TO-220

Tube

1

2

3

TAB

TO-220

TAB

D PAK

2

AM01475v1_Tab

D(2, TAB)

G(1)

S(3)

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