STP18N65M2 datasheet(3/15 Pages) STMICROELECTRONICS

No. de pieza	STP18N65M2

Descripción Electrónicos	Extremely low gate charge

PDF	15 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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3 / 15 page

DocID026870 Rev 2

3/15

STI18N65M2, STP18N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

110

dv/dt (2)

ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

Peak diode recovery voltage slope

V/ns

dv/dt(3)

VDS ≤ 520V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.14

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj =25 °C, ID =IAR; VDD =50V)

450

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