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BULT3P3 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza BULT3P3
Descripción Electrónicos  Medium voltage fast-switching PNP power transistor
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BULT3P3 Datasheet(HTML) 3 Page - STMicroelectronics

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BULT3P3
Electrical characteristics
Doc ID 16300 Rev 1
3/8
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = - 300 V
VCE = - 300 V TC = 125 °C
-0.1
-0.5
mA
mA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = - 10 mA
-6
-12
V
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter
sustaining voltage
(IB = 0)
IC = - 10 mA
-200
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = - 0.7 A
IB = - 0.1 A
IC = - 1 A _ _ IB = - 0.2 A
-0.5
-0.5
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = - 0.5 A__ IB = - 0.1 A
IC = - 1 A ___ IB = - 0.2 A
IC = - 2 A ___ IB = - 0.4 A
-1.0
-1.1
-1.3
V
V
V
hFE
DC current gain
IC = - 10mA
VCE = - 5 V
IC = - 0.75 A
VCE = - 5 V
IC = - 2 A
VCE = - 5 V
10
22
4
28
36
tr
ts
tf
Resistive load
Rise time
Storage time
Fall time
IC = - 0.7 A _ VCC = - 150 V
IB(on) = - IB(off) = 140 mA
Tp = 30 µs
60
1.2
70
1.6
100
ns
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC = - 1 A _ IB(on) = 100 mA
VBE(off) = 5 V
Rbb = 0
Vclamp = 150 V L = 1 mH
110
35
180
70
ns
ns



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