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START499ETR Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza START499ETR
Descripción Electrónicos  NPN RF silicon transistor
PDF  14 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

START499ETR Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
START499ETR
4/14
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Electrical characteristics
Table 4.
Electrical characteristics (tJ = 25 °C, unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ICBO
Collector cutoff current
VCB = 5 V, IE = 0 A
1.2
µA
IEBO
Emitter-base cutoff current
VEB = 1.5 V, IC = 0 A
120
µA
hFE
DC current gain
IC = 160 mA, VCE = 4 V
160
G
Power gain
IC = 200 mA, VCE = 3 V,
f = 1.8 GHz
15
dB
P-1dB
1dB compression point
IC = 200 mA,VCE = 3 V,
f = 1.8 GHz
23.5
dBm
IP3
Ouput third order intercept
point
IC = 200 mA, VCE = 3 V,
f = 1.8 GHz
33.5
dBm
NF
Noise figure
IC = 200 mA, VCE = 3 V,
f = 1.8 GHz
3.3
dB
Table 5.
Quick reference data
Mode of operation
f (GHz)
VCE (V)
PL (dBm)
GP (dB)
η (%)
Class-AB (Icq = 5 mA)
1.9
3.6
26
≤ 12
typ. 68



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