MDF3752TH datasheet(1/6 Pages) MGCHIP

No. de pieza	MDF3752TH

Descripción Electrónicos	P-Channel Trench MOSFET, -40V, -36.5A, 17m(ohm)

PDF	6 Pages

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Fabricante Electrónico	MGCHIP [MagnaChip Semiconductor.]

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1 / 6 page

April 2015. Version 1.1

MagnaChip Semiconductor Ltd.

1

D

G

S

Absolute Maximum Ratings (TC =25

o)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

-40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(Note 1)

TC=25

oC

ID

-36.5

A

TC=100

oC

-23.1

A

Pulsed Drain Current

IDM

-90

A

Power Dissipation

TC=25

oC

PD

35.7

W

TC=100

oC

14.3

Single Pulse Avalanche Energy

(Note 2)

EAS

128

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~+150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

3.5

MDF3752

P-Channel Trench MOSFET, -40V, -36.5A, 17m

Ω

General Description

The

MDF3752

uses

advanced

MagnaC

hip’s Trench

MOSFET Technology to provided high performance in on-

state resistance, switching performance and reliability.

Low RDS(ON), Low Gate Charge can be offering superior

benefit in the application.

Applications



Inverters



General purpose applications

Features



VDS = -40V



ID = -36.5A @VGS = -10V



RDS(ON)

< 17m

Ω

@ VGS = -10V

< 25m

Ω

@ VGS = -4.5V

D

G

S

G

S

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MDF3752TH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

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