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MDHT4N25 Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MDHT4N25 Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 7 page ![]() Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd. 2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDHT4N25URH -55~150 oC SOT-223 Reel and Tape Halogen Free Electrical Characteristics (Ta =25 oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 250 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 250V, VGS = 0V - - 1 μA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 0.415A 1.38 1.75 Ω Forward Transconductance gfs VDS = 30V, ID = 0.415A - 0.91 - S Dynamic Characteristics Total Gate Charge Qg VDS = 200V, ID = 3.6A, VGS = 10V - 4.2 - nC Gate-Source Charge Qgs - 1.35 - Gate-Drain Charge Qgd - 1.95 - Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1.0MHz - 146 - pF Reverse Transfer Capacitance Crss - 3 - Output Capacitance Coss - 32 - Turn-On Delay Time td(on) VGS = 5V, VDS = 125V, ID = 3.6A, RG = 25Ω - 8 - ns Rise Time tr - 21 - Turn-Off Delay Time td(off) - 5 - Fall Time tf - 16 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - 0.83 - A Source-Drain Diode Forward Voltage VSD IS = 0.83A, VGS = 0V - - 1.5 V Body Diode Reverse Recovery Time trr IF = 3.6A, dl/dt = 100A/μs (3) - 110 - ns Body Diode Reverse Recovery Charge Qrr - 0.34 - μC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C. 3. ISD ≤3.6A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=120mH, IAS=0.83A, VDD=50V, Rg =25Ω, Starting TJ=25°C |
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