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MDHT4N25 Datasheet(PDF) 2 Page - MagnaChip Semiconductor.

No. de pieza MDHT4N25
Descripción Electrónicos  N-Channel MOSFET 250V, 0.83A, 1.75(ohm)
PDF  7 Pages
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Fabricante Electrónico  MGCHIP [MagnaChip Semiconductor.]
Página de inicio  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDHT4N25 Datasheet(HTML) 2 Page - MagnaChip Semiconductor.

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Mar. 2016 Version 1.1
MagnaChip Semiconductor Ltd.
2
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDHT4N25URH
-55~150
oC
SOT-223
Reel and Tape
Halogen Free
Electrical Characteristics (Ta =25
oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
250
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
3.0
-
5.0
Drain Cut-Off Current
IDSS
VDS = 250V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
-
100
nA
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 0.415A
1.38
1.75
Ω
Forward Transconductance
gfs
VDS = 30V, ID = 0.415A
-
0.91
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 200V, ID = 3.6A, VGS = 10V
-
4.2
-
nC
Gate-Source Charge
Qgs
-
1.35
-
Gate-Drain Charge
Qgd
-
1.95
-
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
146
-
pF
Reverse Transfer Capacitance
Crss
-
3
-
Output Capacitance
Coss
-
32
-
Turn-On
Delay Time
td(on)
VGS = 5V, VDS = 125V, ID = 3.6A,
RG = 25Ω
-
8
-
ns
Rise Time
tr
-
21
-
Turn-Off Delay Time
td(off)
-
5
-
Fall Time
tf
-
16
-
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
IS
-
0.83
-
A
Source-Drain Diode Forward Voltage
VSD
IS = 0.83A, VGS = 0V
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
IF = 3.6A, dl/dt = 100A/μs
(3)
-
110
-
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.34
-
μC
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T
J(MAX)=150°C.
3. ISD ≤3.6A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=120mH, IAS=0.83A, VDD=50V, Rg =25Ω, Starting TJ=25°C



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