AS4C16M16S datasheet(1/54 Pages) ALSC

No. de pieza	AS4C16M16S

Descripción Electrónicos	Programmable Mode registers

PDF	54 Pages

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Fabricante Electrónico	ALSC [Alliance Semiconductor Corporation]

Página de inicio	https://www.alliancememory.com

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AS4C16M16S

Confidential

1

Rev 3

Feb. 2014

16M x 16 bit Synchronous DRAM (SDRAM)

Confidential

Advanced (Rev. 1.4, Feb. /2012)

Features

 Fast access time from clock: 5.4/5.4 ns

 Fast clock rate: 166/143 MHz

 Fully synchronous operation

 Internal pipelined architecture

 4M word x 16-bit x 4-bank

 Programmable Mode registers

- CAS Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential or Interleaved

- Burst stop function

 Auto Refresh and Self Refresh

 8192 refresh cycles/64ms

 CKE power down mode

 Single +3.3V power supply

 Interface: LVTTL

 Operating temperature range

- Commercial (0 ~ 70°C)

- Industrial (-40 ~ 85°C)

- Automotive (-40 ~ 105°C)

 54-pin 400 mil plastic TSOP II package

 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package

All parts fully ROHS Compliant

Overview

T

he 256Mb SDRAM is a high-speed CMOS

synchronous DRAM containing 256 Mbits. It is

internally configured as 4 Banks of 4M word x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses start at a selected location

and continue for a programmed number of locations in

a programmed sequence. Accesses begin with the

registration of a BankActivate command which is then

followed by a Read or Write command.

The SDRAM provides for programmable Read or

Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy

to use. By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well

suited

for

applications

requiring

high

memory

bandwidth and particularly well suited to high

performance PC applications.

Table 1. Key Specifications

AS4C16M16S

-6/7

tCK3

Clock Cycle time (min.)

6/7 ns

tAC3

Access time from CLK (max.)

5.4/5.4 ns

tRAS

Row Active time (min.)

42/49 ns

tRC

Row Cycle time (min.)

60/63 ns

Table 2. Ordering Information

Part Number

Frequency

Package

AS4C16M16S-7TCN

143 MHz

54 pin TSOP II

AS4C16M16S-6TCN

166 MHz

54 pin TSOP II

AS4C16M16S-6TIN

166 MHz

54 pin TSOP II

AS4C16M16S-6BIN

166 MHz

54 ball TFBGA

AS4C16M16S-7BCN

143 MHz

54 ball TFBGA

AS4C16M16S-6TAN

166 MHz

54 pin TSOP II

T : indicates TSOP II package

B : indicates TFBGA package

N : indicates Pb free and Halogen free – ROHS compliant parts

C: Commercial I: Industrial A: Automotive temperatures

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