SW110R03VT datasheet(1/6 Pages) SEMIPOWER

No. de pieza	SW110R03VT

Descripción Electrónicos	N-channel Enhanced mode TO-252/DFN3*3 MOSFET

PDF	6 Pages

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Fabricante Electrónico	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Página de inicio	http://www.samwinsemi.com

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1 / 6 page

Apr. 2017. Rev. 3.0

1/6

SW110R03VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-252

DFN3*3

V

DSS

Drain to source voltage

30

V

I

D

Continuous drain current (@T

C=25

oC)

55*

A

Continuous drain current (@T

C=100

oC)

35*

A

I

DM

Drain current pulsed

(note 1)

220

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

56

mJ

E

AR

Repetitive avalanche energy

(note 1)

6

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

48

W

Total power dissipation (@T

a=25

oC)

2.6

W

Derating factor above 25oC

0.4

0.02

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

Thermal characteristics

*. Drain current is limited by junction temperature.

TO-252 :1. Gate 2. Drain 3. Source

DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 110R03VT

SW110R03VT

TO-252

REEL

2

SW H 110R03VT

SW110R03V

DFN3*3

REEL

N-channel Enhanced mode TO-252/DFN3*3 MOSFET

Features

 High ruggedness

 Low R

DS(ON) (Typ 14mΩ)@VGS=4.5V

 Low R

DS(ON) (Typ 10mΩ)@VGS=10V

 Low Gate Charge (Typ 21nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC Converter,Motor

Control,Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

DSS : 30V

I

D

: 55A

R

DS(ON) : 14mΩ@VGS=4.5V

10m

Ω@V

GS=10V

G

D

S

TO-252

1

2

3

Symbol

Parameter

Value

Unit

TO-252

DFN3*3

R

thjc

Thermal resistance, Junction to case

2.6

oC/W

R

thja

Thermal resistance, Junction to ambient

49

oC/W

DFN3*3

G(4) D(5,6,7,8)

S(1,2,3)

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user's

board design.

DFN3*3 R

thja : 49

oC/W on a 1 in2 pad of 2oz copper.

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SW110R03VT Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

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