ACE2N7002KA

N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE2N7002KA is the N-Channel enhancement mode field effect transistors are produced using

high cell density DMOS technology. These products have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching performance. They can be used in most applications

requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly

suited for low voltage, low current applications such as small servo motor control, power MOSFET gate

drivers, and other switching applications.

Features

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Exceptional on-resistance and maximum DC current capability

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TSOT-23-3 package design

Applications

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Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.

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High saturation current capability. Direct Logic-Level Interface: TTL/CMOS

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Battery Operated Systems

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Solid-State Relays

Absolute Maximum Ratings

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

0.3

A

Pulsed Drain Current(*)

0.8

A

Power Dissipation

0.35

A

Operating Junction Temperature

-55~150

W

Storage Temperature Range

-55~150

Thermal Resistance-Junction to Ambient

350

(*) Pulse width limited by safe operating area