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804DCR Datasheet(PDF) 2 Page - Naina Semiconductor ltd. |
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804DCR Datasheet(HTML) 2 Page - Naina Semiconductor ltd. |
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2 / 3 page ![]() Naina Semiconductor Ltd. 804DCR 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Triggering Parameters (TJ = 25 oC, unless otherwise specified) Parameters Symbol Values Units DC gate current to trigger IGT 200 mA DC gate voltage to trigger VGT 3.0 V Thermal and Mechanical Specifications (TJ = 25 oC, unless otherwise specified) Parameters Symbol Values Units Maximum operating junction temperature range TJ - 40 to +125 oC Maximum storage temperature range TStg - 40 to +125 oC Maximum thermal resistance, junction to case Rth(JC) 0.045 oC/W Mounting torque F 12 .. 14 kN Approximate weight WT 260 g Package Outline ALL DIMENSIONS IN MM Blocking Parameters (TJ = 25 oC, unless otherwise specified) Parameters Symbol Values Units Critical rate of rise of off-state voltage @ TJ = TJ max, linear to 80% rated VDRM dV/dt 500 V/µs Maxmimum peak reverse & off-state leakage current @ TJ = TJ max, rated VDRM/VRRM applied IRRM, IDRM 50 mA |
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