LF353M datasheet(3/14 Pages) NSC

3 / 14 page

AC Electrical Characteristics (Continued)

(Note 5)

Symbol

Parameter

Conditions

LF353

Units

Min

Typ

Max

THD

Total Harmonic Distortion

V=+10, RL=10k,

O=20Vp−p,

BW=20 Hz-20 kHz

<0.02

Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package,

and 158˚C/W typ junction to ambient for the H package.

Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.

Note 4: The power dissipation limit, however, cannot be exceeded.

Note 5: These specifications apply for VS=±15V and 0˚C≤TA≤+70˚C. VOS,IBand IOS are measured at VCM=0.

Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to the limited

production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient

temperature as a result of internal power dissipation, PD.Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is

recommended if input bias current is to be kept to a minimum.

Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS

= ±6V to ±15V.

Note 8: Human body model, 1.5 k

Ω in series with 100 pF.

Typical Performance Characteristics

Input Bias Current

00564918

00564919

Supply Current

Positive Common-Mode Input Voltage Limit

00564920

00564921

LF353M Datasheet(PDF) 3 Page - National Semiconductor (TI)

LF353M Datasheet(HTML) 3 Page - National Semiconductor (TI)

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Descarga

Enlace URL