FMP05P30 datasheet(2/2 Pages) FCI

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ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = -250uA

-30

Drain-Source On-State Resistance

RDS(on)

VGS = -4.5V, ID = -4.2A

85.0

88.0

Drain-Source On-State Resistance

RDS(on)

VGS = -10V, ID = -5.3A

58.2

59.4

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID = -250uA

-1.0

-3.0

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

-1

Gate Body Leakage

IGSS

VGS = +20V, VDS = 0V

+ 100

Gate Resistance

Forward Transconductance

gfs

VDS = -15V, ID = -5.3A

Dynamic

Total Gate Charge

9.52

Gate-Source Charge

Qgs

3.43

Gate-Drain Charge

Qgd

1.71

Turn-On Delay Time

td(on)

10.8

Turn-On Rise Time

2.33

Turn-Off Delay Time

td(off)

22.53

Turn-Off Fall Time

3.87

Input Capacitance

Ciss

551.57

Output Capacitance

Coss

90.96

Reverse Transfer Capacitance

Crss

60.79

Source-Drain Diode

Max. Diode Forward Current

-1.9

Diode Forward Voltage

VSD

IS = -5.3A, VGS = 0V

-1.3

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

August '05 Rev 2

VDS = -15V, VGS = 0V

f = 1.0 MHz

VDD = -15V, RL = 15Ω

D = −1Α, VGEN = -10V

RG = 6Ω

VDS = -15V, ID = -5.3A

VGS = -10V

FMP05P30 5.3A 30V P-Channel Enhancement-Mode MOSFET

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