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MBRF40200CT Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No. de pieza MBRF40200CT
Descripción Electrónicos  TO-220F Plastic package Schottky diode
PDF  6 Pages
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Fabricante Electrónico  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Página de inicio  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

MBRF40200CT Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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MBRF40200CT
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
VRRM
VRWM
VDC
200
V
RMS Reverse Voltage
VRMS
140
V
Average forward rectified Current
IF(AV)
40
A
Non Repetitive Peak Surge Current
IFSM
320
A
Thermal Resistance Junction to Case
RθJc
4.5
/W
Junction and Storage Temperature Range
Tj Tstg
-40~+175
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Reverse Voltage
V(BR)R
IR =1mA
Ta=25℃
200
V
Peak Forward Voltage
VFM
IF =5.0A
Ta=25℃
0.82
V
IF =5.0A
Ta=125℃
0.78
V
IF =20A
Ta=25℃
0.95
V
IF =20A
Ta=125℃
0.82
V
Instantaneous Reverse Current
IR
Note 1)
VR=200V
Ta=25℃
100
uA
VR=200V
Ta=125℃
5
mA
注/Notes:
1. 使用极短的测试时间,以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明,数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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