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2SA1213 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No. de pieza 2SA1213
Descripción Electrónicos  Silicon PNP transistor in a SOT-89 Plastic Package
PDF  6 Pages
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Fabricante Electrónico  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Página de inicio  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SA1213 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SA1213
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-2.0
A
Collector Base-Continuous
IB
-0.4
A
Collector Power Dissipation
PC
500
mW
Collector Power Dissipation*
*PC(Ta=25℃)
1000
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
*BR2SA1213 mounted on ceramic substrate(250mm2×0.8t).
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector Cut-Off Current
ICBO
VCB=-50V
IE=0
-0.1
μA
Emitter Base Cut-Off Current
IEBO
VEB=-5.0V
IC=0
-0.1
μA
Collector to Emitter Breakdown
Voltage
VCEO
IC=-10mA
IB=0
-50
V
DC Current Gain
hFE(1)
VCE=-2.0V
IC=-500mA
70
240
hFE(2)
VCE=-2.0V
IC=-2.0A
20
Collector to Emitter Saturation
Voltage
VCE(sat) IC=-1.0A
IB=-0.05A
-0.5
V
Collector to Base Saturation Voltage VBE(sat) IC=-1.0A
IB=-0.05A
-1.2
V
Transition Frequency
fT
VCE=-2.0V
IC=-500mA
120
MHz
Collector Output Capacitance
Cob
VCB=-10V
IE=0
f=1MHz
40
pF
Turu-On Time
ton
-IB1=IB2=0.05A
VCC=-30V
0.1
μS
Storage Time
tstg
1.0
Fall Time
tf
0.1
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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