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2SC4458L Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No. de pieza 2SC4458L
Descripción Electrónicos  Silicon NPN transistor in a TO-220F Plastic Package.
PDF  5 Pages
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Fabricante Electrónico  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Página de inicio  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC4458L Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC4458L
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 5
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
900
V
Collector to Emitter Voltage
VCEO
500
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
8.0
A
Base Current - Continuous
IB
4.0
A
Emitter Current - Continuous
IE
12
A
Collector Power Dissipation
PC(Tc=25℃)
40
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=1mA
IB=0
900
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=10mA
IB=0
500
V
Collector Cut-Off Current
ICEO
VCE=400V
IE=0
250
μA
Emitter Cut-Off Current
IEBO
VEB=7V
IC=0
100
μA
Collector Cut-Off Current
ICBO
VCB=700V
IC=0
100
μA
DC Current Gain
hFE(1)
VCE=5.0V
IC=2.0A
25
40
hFE(2)
VCE=5.0V
IC=5.0A
8.0
Collector to Emitter Saturation
Voltage
VCE(sat)(1)
IC=2.0A
IB=0.4A
0.3
V
VCE(sat)(2)
IC=5.0A
IB=1.0A
0.6
V
VCE(sat)(3)
IC=8.0A
IB=2.0A
1.2
V
Base to Emitter Saturation Voltage
VBE(sat)(1)
IC=2.0A
IB=0.4A
1.1
V
VBE(sat)(2)
IC=5.0A
IB=1.0A
1.2
V
Transition Frequency
fT
VCE=10V
IC=0.5A
4.0
MHz
Storage Time
tS
VCC=125V
IC=5A
IB1=-IB2=1A RL=50Ω
3.5
μs
Fall Time
tF
0.7
μs
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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