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2SD2012 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No. de pieza 2SD2012
Descripción Electrónicos  Silicon NPN transistor in a TO-220F Plastic Package.
PDF  6 Pages
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Fabricante Electrónico  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Página de inicio  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SD2012 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SD2012
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7.0
V
Collector Current - Continuous
IC
3
A
Base Current
IB
0.5
A
Collector Power Dissipation
PC
2
W
Collector Power Dissipation
PC (Tc=25 )
℃
25
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter Breakdown
Voltage
VCEO
IC=50mA
IB=0
60
V
Collector Cut-Off Current
ICBO
VCB=60V
IE=0
100
μA
Emitter Cut-Off Current
IEBO
VEB=7.0V
IC=0
100
μA
DC Current Gain
hFE(1)
VCE=5V
IC=0.5A
100
320
hFE(2)
VCE=5V
IC=2A
20
Collector to Emitter Saturation
Voltage
VCE(sat) IC=2A
IB=0.2A
0.4
1.0
V
Base to Emitter Voltage
VBE
VCE =5V
IC =0.5A
0.75
1.0
V
Transition Frequency
fT
VCE=5V
IC=0.5A
3.0
MHz
Collector output capacitance
Cob
VCB=10V
IE=0
f=1MHz
35
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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