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2SC2233 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No. de pieza 2SC2233
Descripción Electrónicos  Silicon NPN transistor in a TO-220 Plastic Package.
PDF  6 Pages
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Fabricante Electrónico  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Página de inicio  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC2233 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC2233
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
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参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
200
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current - Continuous
IC
4.0
A
Peak Collector Current - Continuous
ICM
10
A
Base Current - Continuous
IB
2.0
A
Collector Power Dissipation
PD(TC=25 )
℃
40
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter Breakdown
Voltage
VCEO
IC=50mA
IB=0
60
V
Emitter to Base Breakdown
Voltage
VEBO
IB=1.0mA
IC=0
5.0
V
Collector Cut-Off Current
ICBO
VCB=170V
IE=0
10
μA
Emitter Cut-Off Current
IEBO
VEB=5.0V
IC=0
10
μA
DC Current Gain
hFE(1)
VCE=5.0V
IC=1.0A
30
150
hFE(2)
VCE=5.0V
IC=4.0A
20
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=4.0A
IB=0.4A
1.0
V
Base to Emitter Saturation
Voltage
VBE(sat)
IC=4.0A
IB=0.4A
1.5
V
Transition Frequency
fT
VCE=5.0V
IC=0.5A
f=1.0MHZ
5.0
MHZ
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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