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BGS2 Datasheet(PDF) 1 Page - BeRex Corporation

No. de pieza BGS2
Descripción Electrónicos  50-4000 MHz SILICON GERMANIUM Gain Block
PDF  8 Pages
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Fabricante Electrónico  BEREX [BeRex Corporation]
Página de inicio  http://www.berex.com
Logo BEREX - BeRex Corporation

BGS2 Datasheet(HTML) 1 Page - BeRex Corporation

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1
Rev. F
BeRex
●website: www.berex.com
●email: sales@berex.com
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2015 BeRex
50-4000 MHz SILICON GERMANIUM Gain Block
BGS2
Single Fixed 3V supply
No Dropping Resistor Required
No matching circuit needed
Lead-free/Green/RoHS compliant SOT-363 package
Application: Driver Amplifier, Cellular, PCS, GSM,
UMTS, WCDMA, Wireless Data
BeRex’s BGS2 is a high SiGe HBT MMIC am-
plifier, internally matched to 50 Ohms with-
out the need for external components. De-
signed to run directly from a 3V supply. The
BGS2 is designed for high linearity 3V gain
block applications . It is packaged in a RoHS-
compliant with SOT-363 surface mount
package.
Product Description
Device Features
 Driver Amplifier
 Cellular, PCS, GSM, UMTS, WCDMA
Applications
Applications Circuit
*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH
1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.
2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.
Typical Performance
1
Absolute Maximum Ratings
Min.
Typical
Max.
Unit
Bandwidth
70
4000
MHz
IC @ (Vc = 3V)
30
34
38
mA
VC
3.0
V
dG/dT
-0.005
dB/°C
RTH
130
°C/W
Parameter
Unit
Rating
Operating Case Temperature
°C
-40 to +105
Storage Temperature
°C
-55 to +155
Junction Temperature
°C
+150
Operating Voltage
V
+3.8
Supply Current
mA
100
Input RF Power
dBm
15
Operation of this device above any of these parameters may result in permanent damage.
**less than 56nH improves RF performance at over 0.9GHz.
*1uH or higher value L1 improves RF performance at under 900MHz.
*Optimum value of L1 may vary with board design.
BGS2
L1
C1
C3
C4
RFin
RFout
C5
+3V
C2
*C1,C2=2000pF, L1=1uH for 70MHz application,
BS2
X
IN
GND
GND
OUT
GND
GND
Pin Description
RF IN
3
RF OUT
6
GND
1,2,4,5
Part Marking (X: Wafer number)
Parameter
Frequency
Unit
70
900
1900 2450 2650 3500 MHz
Gain
26.5
23.6
19.8
18.1
17.2
15
dB
S11
-19.6 -18.3 -18.6 -18.4 -17.6 -13.7
dB
S22
-15.6 -12.8
-9.9
-10.5 -13.2 -15.7
dB
OIP3
2
28
25.5
24.5
22.5
25
19.2
dBm
P1dB
15.6
13.4
12.8
10.8
10.4
8.7
dBm
N.F
2.7
2.3
2.2
2.3
2.5
2.7
dB
Application Circuit Values Example
Freq.
70~900MHz
900MHz ~ 3GHz
3GHz ~ 4GHz
C1/C2
2nF
100pF
100pF
L1
1uH
56nH
27nH
(1608 Chip Ind.)
*C1,C2=100pF, L1=27nH for 3.5GHz application.


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