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SMF101AM Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SMF101AM
Descripción Electrónicos  Voltage 50 ~ 1000 V 1.0 Amp Fast Recovery Rectifiers
PDF  2 Pages
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMF101AM Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SMF101AM~SMF107AM
Voltage 50 ~ 1000 V
1.0 Amp Fast Recovery Rectifiers
17-Apr -2015 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low profile package
Glass Passivated Chip Juntion
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case : SMAM
Terminals: Solderable per MIL-STD-750, Method 2026
Weight: 27 mgram (Approximate)
MARKING
Part Number
Marking Code
Part Number
Marking Code
SMF101AM
RS1A
SMF105AM
RS1J
SMF102AM
RS1B
SMF106AM
RS1K
SMF103AM
RS1D
SMF107AM
RS1M
SMF104AM
RS1G
PACKAGE INFORMATION
Package
MPQ
Leader Size
SMAM
3K
7 inch
ABSOLUTE MAXIMUM RATINGS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
SMF
101AM
SMF
102 AM
SMF
103 AM
SMF
104AM
SMF
105AM
SMF
106AM
SMF
107AM
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified
Current
IF
1
A
Peak Forward Surge Current, 8.3ms single
half sine-wave superimposed on rated load
IFSM
30
A
Maximum Instantaneous Forward Voltage
IF=1A @ 25°C
VF
1.3
V
TA=25°C
5
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA=125°C
IR
100
µA
Maximum Reverse Recovery Time
1
TRR
150
250
500
nS
Typical Junction Capacitance
3
CJ
15
pF
Typical Thermal Resistance
2
RθJL
22
°C/W
Typical Thermal Resistance
2
RθJC
30
°C/W
Operating & Storage Temperature
TJ,TSTG
-55~ 150
°C
Notes:
1. Measured with IF=0.5A,IR=1A,IRR=0.25A
2. P.C.B. mounted with 10 X 10 x 0.2 mm copper pad areas.
3. Measured at 1MHz and applied reverse voltage of 4V D.C
SMAM
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
3.30
3.70
D
0.80
1.20
B
2.40
2.70
E
1.30
1.60
C
4.40
4.90
F
0.90
1.10


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