SSD35P03 datasheet(1/4 Pages) SECOS

No. de pieza	SSD35P03

Descripción Electrónicos	P-Ch Enhancement Mode Power MOSFET

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

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Elektronische Bauelemente

SSD35P03

-35A, -30V, RDS(O ) 28m

P-Ch Enhancement Mode Power MOSFET

31-May-2017 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

TO-252(D-Pack)

35P03

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD35P03 is the highest performance trench

P-ch MOSFETs with extreme high cell density , which

provide excellent RDS(ON) and gate charge for most of the

synchronous buck converter applications.

The SSD35P03 meet the RoHS and Green Product with

Function reliability approved.

FEATURES

Advanced high Cell Density Trench Technology

Super Low Gate Charge

Green Device Available

TO-252 Package

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

TO-252

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25

°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

TC=25°C

-35

A

Continuous Drain Current, @VGS=10V

1

TC=100°C

ID

-22

A

Pulsed Drain Current

2

IDM

-80

A

Power Dissipation

TC=25°C

PD

50

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

Thermal Resistance Ratings

Maximum Thermal Resistance Junction-Ambient

1

RθJA

62.5

Maximum Thermal Resistance Junction-Case

1

RθJC

2.5

°C / W

A

C

D

N

O

P

G E

F

H

K

J

M

B

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.35

6.90

J

2.336 REF.

B

4.95

5.53

K

0.89 REF.

C

2.10

2.50

M

0.45

1.14

D

0.665 Typ.

N

1.55 Typ.

E

6.0

7.5

O

0

0.13

F

2.90 REF

P

0.58 REF.

G

5.40

6.40

H

0.60

1.20

1

Gate

3

Source

2

Drain

Date Code

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