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IRFE430 Datasheet(PDF) 1 Page - International Rectifier |
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IRFE430 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page ![]() Product Summary Part Number BVDSS RDS(on) ID IRFE430 500V 1.50 Ω 2.5A Features: n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n Small footprint n Surface Mount n Lightweight N-CHANNEL Provisional Data Sheet No. PD - 9.1719 500Volt, 1.50 Ω Ω Ω Ω Ω, HEXFET The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. HEXFET transistors also feature all of the well-es- tablished advantages of MOSFETs, such as volt- age control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is re- quired. 12/3097 Absolute Maximum Ratings Parameter IRFE430, JANTX-, JANTXV-, 2N6802U Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 2.5 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 1.5 IDM Pulsed Drain Current 11 PD @ TC = 25°C Max. Power Dissipation 25 W Linear Derating Factor 0.20 W/K VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 0.31 mJ dv/dt Peak Diode Recovery dv/dt 6.2 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Surface Temperature 300 ( for 5 seconds) Weight 0.42 (typical) g oC A IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET® TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] |
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