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CSF10S45CT-A Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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CSF10S45CT-A Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 3 page ![]() 1 ■ Features ■ Mechanical data ■ Maximum ratings and electrical characteristics O Rating at 25 C ambient temperature unless otherwise specified. Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Suffix "G" indicates Halogen-free part, ex.CSF10S45 G-A. • CT Lead free in compliance with EU RoHS. • V F I R Forward voltage drop (per diode) Reverse current (per diode) Parameter O V = V T = 25 C R R R M J O V = V T = 125 C R R R M J Conditions Symbol TYP. UNIT 100 0.5 mV mA MIN. MAX. O I = 5A, T = 25 C F J O I = 5A, T = 125 C F J 350 435 CSF10S45CT-A I O I F S M I R R M T J Forward rectified current (total device) Forward surge current (per diode) Operating Junction temperature Parameter 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Conditions Symbol UNIT -55 ~ +150 10 250 A A O C Peak repetitive reverse surge current A 2us - 1kHz 2 Working peak reverse voltage V RW M V CSF10S45CT-A 45 (per diode) Document ID : DS-11KA8 Revised Date : 2016/12/19 Revision : C9 • Epoxy : UL94-V0 rated flame retardant. . • Case : JEDEC ITO-220AB molded plastic body • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. ed. • Polarity: As mark . • Mounting Position : Any . • Weight : Approximated 2.25 gram ■ Outline ITO-220AB symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max 0.390(9.9) 0.408(10.36) 0.268(6.8) 0.283(7.2) 0.583(14.8) 0.598(15.2) 0.512(13.0) 0.543(13.8) 0.102(2.6) 0.150(3.8) 0.101(2.55) 0.112(2.85) 0.043(1.1) 0.053(1.35) 0.043(1.1) 0.053(1.35) 0.020(0.5) 0.028(0.7) 0.098(2.49) 0.102(2.59) 0.169(4.3) 0.185(4.7) 0.112(2.85) 0.128(3.25) 0.098(2.5) 0.114(2.9) 0.020(0.5) 0.028(0.7) 0.130(3.3) 0.134(3.5) symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max 0.383(9.72) 0.404(10.27) 0.248(6.3) 0.272(6.9) 0.571(14.5) 0.610(15.5) 0.516(13.1) 0.547(13.9) - 0.161(4.1) 0.094(2.4) 0.126(3.2) 0.039(1.0) 0.051(1.3) 0.039(1.0) 0.051(1.3) 0.020(0.5) 0.035(0.9) 0.095(2.41) 0.105(2.67) 0.169(4.3) 0.189(4.8) 0.055(1.4) 0.122(3.1) 0.091(2.3) 0.117(2.96) 0.014(0.35) 0.031(0.8) 0.122(3.1) 0.142(3.6) Alternate PIN 1 PIN 3 PIN 2 Marking code A 1 2 3 J B C D E F G H I K L M N ØP Marking code A 1 2 3 J B C D E F G H I K L M N ØP Chip Integration Technology Corporation 10A MOS Schottky Rectifier Main Product Characteristics I F ( AV ) 2x5A V R R M T J V ( Ty p ) 45V O 150 C 0.35V Typical Thermal resistance (per diode) O C/W 8 R θ J C Junction to case O C/W 50 R θ J A Junction to ambient T S T G Storage temperature -55 ~ +150 O C V B R Reverse Breakdown Voltage (per diode) O I = 0.5mA T = 25 C R J 45 V O I = 3A, T = 25 C F J 370 |
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