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BUF420M Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza BUF420M
Descripción Electrónicos  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUF420M Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Thermal Resistance Junction-Case
Max
0.63
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5
Ω)
VCE = 850 V
VCE = 850 V
TC = 100
oC
0.2
1
mA
mA
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = 850 V
VCE = 850 V
TC = 100
oC
0.2
1
mA
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA
L = 25 mH
450
V
VEBO
Emitter Base Voltage
(IC = 0)
IE = 50 mA
7
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 10A
IB = 1 A
IC = 10 A
IB = 1 A
TC =100
oC
IC = 20 A
IB = 4 A
IC = 20 A
IB = 4 A
TC =100
oC
0.8
0.5
2.8
2
V
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 10A
IB = 1 A
IC = 10 A
IB = 1 A
TC =100
oC
IC = 20 A
IB = 4 A
IC = 20 A
IB = 4 A
TC =100
oC
0.9
1.1
1.5
1.5
V
V
V
V
dic/dt
Rate of rise on-state
Collector Current
VCC = 300 V
RC = 0
tp = 3
µs
IB1 = 1.5 A
TC =25
oC
IB1 = 1.5 A
TC =100
oC
IB1 = 6 A
TC =100
oC
70
150
100
A
/µs
A
/µs
A
/µs
VCE(3
µs) Collector-Emitter
Dynamic Voltage
VCC = 300 V
RC = 60
IB1 = 1.5 A
TC =25
oC
IB1 = 1.5 A
TC =100
oC
2.1
8
V
V
VCE(5
µs) Collector-Emitter
Dynamic Voltage
VCC = 300 V
RC = 60
IB1 = 1.5 A
TC =25
oC
IB1 = 1.5 A
TC =100
oC
1.1
4
V
V
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
IC = 10 A
VCC = 50 V
VBB = - 5 V
RBB = 0.6
Vclamp = 400 V
IB1 = 1 A
L = 0.25 mH
1
0.05
0.08
µs
µs
µs
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
IC = 10 A
VCC = 50 V
VBB = - 5 V
RBB = 0.6
Vclamp = 400 V
IB1 = 1 A
L = 0.25 mH
TC =100
oC
2
0.1
0.18
µs
µs
µs
VCEW
Maximum Collector
Emitter Voltage
without Snubber
IC = 10 A
VCC = 50 V
VBB = - 5 V
RBB = 0.6
IB1 = 1 A
L = 0.25 mH
TC =125
oC
500
V
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
IC = 10 A
VCC = 50 V
VBB = 0
RBB = 0.15
Vclamp = 400 V
IB1 = 1 A
L = 0.25 mH
1.5
0.04
0.07
µs
µs
µs
BUF420M
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