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2SB1077 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1077 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor 1 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1077 DESCRIPTION · Silicon NPN triple diffused · Low Collector-Emitter Saturation Voltage · Complement to Type 2SD1558 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation TC=25℃ 40 W Collector Power Dissipation Ta=25℃ 2 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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