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2SB1253 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB1253
Descripción Electrónicos  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1253 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SB1253_17 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB1253_17 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
2SB1253
DESCRIPTION
·
High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
·
Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
·
Complement to Type 2SD1893
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-10
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
Collector Power Dissipation
@ Ta=25℃
3
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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