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LF355 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LF355
Descripción Electrónicos  JFET Input Operational Amplifiers
PDF  23 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LF355 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for
availability and specifications.
LF155/6
LF256/7/LF356B
LF355/6/7
Supply Voltage
±22V
±22V
±18V
Differential Input Voltage
±40V
±40V
±30V
Input Voltage Range (Note 2)
±20V
±20V
±16V
Output Short Circuit Duration
Continuous
Continuous
Continuous
T
JMAX
H-Package
150˚C
115˚C
115˚C
N-Package
100˚C
100˚C
M-Package
100˚C
100˚C
Power Dissipation at T
A = 25˚C (Notes
1, 8)
H-Package (Still Air)
560 mW
400 mW
400 mW
H-Package (400 LF/Min Air Flow)
1200 mW
1000 mW
1000 mW
N-Package
670 mW
670 mW
M-Package
380 mW
380 mW
Thermal Resistance (Typical)
θ
JA
H-Package (Still Air)
160˚C/W
160˚C/W
160˚C/W
H-Package (400 LF/Min Air Flow)
65˚C/W
65˚C/W
65˚C/W
N-Package
130˚C/W
130˚C/W
M-Package
195˚C/W
195˚C/W
(Typical)
θ
JC
H-Package
23˚C/W
23˚C/W
23˚C/W
Storage Temperature Range
−65˚C to +150˚C
−65˚C to +150˚C
−65˚C to +150˚C
Soldering Information (Lead Temp.)
Metal Can Package
Soldering (10 sec.)
300˚C
300˚C
300˚C
Dual-In-Line Package
Soldering (10 sec.)
260˚C
260˚C
260˚C
Small Outline Package
Vapor Phase (60 sec.)
215˚C
215˚C
Infrared (15 sec.)
220˚C
220˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of
soldering surface mount devices.
ESD tolerance
(100 pF discharged through 1.5k
Ω)
1000V
1000V
1000V
DC Electrical Characteristics
(Note 3)
Symbol
Parameter
Conditions
LF155/6
LF256/7
LF356B
LF355/6/7
Units
Min
Typ
Max Min
Typ
Max Min
Typ
Max
V
OS
Input Offset Voltage
R
S=50Ω,TA=25˚C
3
5
3
5
3
10
mV
Over Temperature
7
6.5
13
mV
∆V
OS/∆T
Average TC of Input
Offset Voltage
R
S=50Ω
5
5
5
µV/˚C
∆TC/∆V
OS
Change in Average TC
with V
OS Adjust
R
S=50Ω, (Note 4)
0.5
0.5
0.5
µV/˚C
per mV
I
OS
Input Offset Current
T
J=25˚C, (Notes 3, 5)
3
20
3
20
3
50
pA
T
J≤THIGH
20
1
2
nA
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