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EC732N7002KB Datasheet(PDF) 2 Page - E-CMOS Corporation

No. de pieza EC732N7002KB
Descripción Electrónicos  60V, 0.3A N-Channel MOSFET
PDF  6 Pages
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Fabricante Electrónico  E-CMOS [E-CMOS Corporation]
Página de inicio  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC732N7002KB Datasheet(HTML) 2 Page - E-CMOS Corporation

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EC732N7002KB
60V、
、
、
、0.3A
N-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
4L11N-Rev.F001
Electrical Characteristics (TA=25℃
℃
℃
℃ unless otherwise noted)
Source-Drain Ratings and Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-to-Source breakdown voltage
V(BR)DSS
VGS = 0V, ID = 250µA
60
V
VGS=10V, ID=0.5A
1.5
2
Static Drain-to-Source on-resistance
RDS(on)
VGS=5V, ID=0.05A
3.0
Gate threshold voltage
VGS(th)
VDS = VGS, ID = 250µA
1
2.5
V
Drain-to-Source leakage current
IDSS
VDS = 60V,VGS = 0V
1
uA
VGS=±5V,VDS=0V
±100
nA
Gate-to-Source forward leakage
IGSS
VGS=±20V,VDS=0V
±10
uA
Turn-on delay time
td(on)
25
Turn-Off delay time
td(off)
VGS=10V, VDS=30V,
ID=0.2A,RGEN=10
35
ns
Input capacitance
Ciss
40
Output capacitance
Coss
16.6
Reverse transfer capacitance
Crss
VGS = 0V
VDS = 25V
ƒ = 1MHz
9.5
pF
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
IS
0.3
A
Pulsed Source Current
(Body Diode)
ISM
MOSFET symbol
showing the
integral reverse
p-n junction diode
1.2
A
Diode Forward Voltage
VSD
IS=0.2A, VGS=0V
1.3
V



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