GS1R datasheet(1/3 Pages) CITC

No. de pieza	GS1R

Descripción Electrónicos	1A Surface Mount General Purpose Rectifiers

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	CITC [Chip Integration Technology Corporation]

Página de inicio	http://www.citcorp.com.tw/english/index.php

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1 / 3 page

1

Dimensions in inches and (millimeters)

■ Features

■ Mechanical data

■ Limiting Value (Absolute Maximum Rating)

■ Outline

I = 1A

o

•

VRRM = 1600V

•

Low profile surface mounted application in order to

•

optimize board space.

High current capability.

•

High surge capability.

•

Glass passivated chip junction inside.

•

Suffix "G" indicates Halogen-free part, ex.GS1RG.

•

Lead-free parts meet environmental standards of

•

MIL-STD-19500 /228

SMA

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, SMA

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Polarity : Indicated by cathode band

• Weight : 0.002 ounce, 0.055 gram

GS1R

1A Surface Mount General Purpose Rectifiers

V

R R M

T

S T G

Repetitive peak reverse voltage

Storage temperature

Parameter

Conditions

Symbol

Value

UNIT

V

Document ID : DS-22G22

Revised Date : 2016/12

Revision : C1

Marking code

0.098 (2.50)

0.067 (1.70)

0.047 (1.20)

0.114 (2.90)

0.083 (2.10)

0.187 (4.75)

0.157 (4.00)

0.012 (0.30)

TYP.

0.224 (5.70)

0.185 (4.70)

0.061 (1.55)

0.030 (0.75)

0.008 (0.20)

0.003 (0.08)

■ ِ Application

• Rectifier

O

■ Electrical characteristics (Ta= 25 C unless otherwise specified.)

1600

Average forward current

0

60Hz half-sine wave, resistance load, T =25 C

a

I

F ( AV )

1

A

Surge (non- repetitive) forward current

0

60Hz half-sine wave, 1 cycle, T =25 C

a

I

F S M

60

Operating Junction temperature

T

J

-55 ~ + 150

O C

-55 ~ + 150

V

F M

C

J

Peak forward voltage

Typical junction capacitance

Parameter

Conditions

Symbol

Max. Value

UNIT

V

1.1

Peak reverse current

I

R R M 1

2.5

μA

50

Thermal resistance (Typical)

R

θ J - A

50

O C/W

35

I =1A

F M

o

V

= V

, T =25 C

R M

R R M

a

I

R R M 2

o

V

= V

, T =125 C

R M

R R M

a

Between junction and ambient

Measured at 1MHz and applied reverse voltage

of 4.0 V.D.C.

pF

Chip Integration Technology Corporation

Document ID : DS-22G22

Revised Date : 2016/12

Revision : C1

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