| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
MHU07N65 Datasheet(PDF) 2 Page - Chip Integration Technology Corporation |
|
|
|||||||||||||||||||||||||||||
MHU07N65 Datasheet(HTML) 2 Page - Chip Integration Technology Corporation |
|
2 / 10 page ![]() 2 O ■ Electrical characteristics(T = 25 C unless otherwise specified) C PARAMETER Gate to Source Forward Leakage Gate Threshold Voltage Forward Trans conductance Input Capacitance Output Capacitance Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Reverse Leakage Drain-to-Source On-Resistance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Continuous Source Current Diode Forward Voltage Reverse recovery time Reverse recovery charge Turn-off Delay Time Maximum Pulse Current Bvdss Temperature Coefficient ■ ON Characteristics PARAMETER PARAMETER PARAMETER ■ Dynamic Characteristics ■ Resistive Switching Characteristics V = 0V, I = 250µA G S D CONDITIONS Symbol V D S S I G S S ( R ) I D S S MIN. 650 TYP. MAX. UNIT V µA I G S S ( F ) -10 10 100 1 Δ BV /ΔT D S S J 0.67 O V/ C O I = 250µA, Reference 25 C D V = 650V, V = 0V, T = 25°C D S G S a V = 520V, V = 0V, T = 125°C D S G S a V = +20V G S V = -20V G S V G S ( t h ) V 2.0 R D S ( o n ) Ω 1.1 1.4 4.0 V = V , I = 250µA D S G S D V = 10V, I = 3.5A G S D CONDITIONS Symbol MIN. TYP. MAX. UNIT g f s C o s s C r s s S pF C i s s 4.5 93 1080 6.5 V = 15V, I = 3.5A D S D V = 25V, V = 0V, f = 1.0MHz D S G S CONDITIONS Symbol MIN. TYP. MAX. UNIT Total Gate Charge Gate toSource Charge Gate to Drain (”Miller”) Charge Fail Time ns tr td ( O F F ) td ( O N ) 36 10 11 I = 7A, V = 520V, V = 10V, R = 9.1Ω D D D G S G CONDITIONS Symbol MIN. TYP. MAX. UNIT nC Q g s Q g d Q g 8 5 24 I = 7A, V = 520V, V = 10V D D D G S tf 18 ■ Source-Drain Diode Characteristics PARAMETER I S ns Q r r I S M V S D t r r 1.5 nC 1200 280 28 7 V A I = 7.0A, V = 0V S G S O I = 7A, T = 25 C, dI /dt = 100A/μs, S J F V = 0V G S CONDITIONS Symbol MIN. TYP. MAX. UNIT ■ Thermal characteristics PARAMETER Thermal Resistance Junction to Ambient CONDITIONS Symbol R θ J C MIN. TYP. MAX. UNIT O C/W R θ J A 1.32 62 Junction to Case ■ Gate-source Zener Diode PARAMETER Gate-Source Breakdown Voltage CONDITIONS Symbol V G S O MIN. TYP. MAX. UNIT V I = ±1mA(open Drain) G S 30 Boby Diode Boby Diode Document ID : DS-22M75 Revised Date : 2015/08/24 Revision : C Pulse Width tp≤300µs,δ≤2% Pulse Width tp≤300µs,δ≤2% MHU07N65 Silicon N-Channel Power MOSFET Chip Integration Technology Corporation ■ OFF Characteristics |
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |