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MJU07N60CT Datasheet(PDF) 1 Page - Chip Integration Technology Corporation

No. de pieza MJU07N60CT
Descripción Electrónicos  600V Super Junction Power MOSFET
PDF  7 Pages
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Fabricante Electrónico  CITC [Chip Integration Technology Corporation]
Página de inicio  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

MJU07N60CT Datasheet(HTML) 1 Page - Chip Integration Technology Corporation

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MJU07N60CT
600V Super Junction Power MOSFET
Document ID : DS-22M82
Revised Date : 2015/12/11
Revision : C
■ Pin Description
■ Features
High speed power switching
•
100% UIS tested, 100% Rg tested
•
nhanced avalanche ruggedness
• Ε
Lead free, halogen free
•
■ Application
• SMPS
• Ηard switching and high speed circuit
• LED lighting
• Flyback
O
■ Absolute Maximum Ratings (T = 25 C unless otherwise specified)
A
PARAMETER
Pulsed Drain Current
Drain to Source Voltage
Gate to Source Voltage
CONDITIONS
Symbol
V
D S
P
D
MJU07N60CT
±30
18
UNIT
-55 to 150
A
W
I
D M
600
7
A
V
G S
V
1.2
Operating and Storage Temperature
E
A S
104
mJ
Thermal Resistance Junction-Ambient
R
t h J A
O C/W
Power Dissipation
Continuous Drain Current
O
T = 25 C
C
I
D
Thermal Resistance Junction-case
55
R
t h J C
O C
Chip Integration Technology Corporation
■ Main product characteristics
V
D S
R
D S ( o n ) , m a x
I
D
600V
580mΩ
7A
V
Avalanche energy, single pulse
O
L =4.0mH, T =25 C
C
T , T
J
S T G
100
O
T = 25 C
C
O C/W
TO-251
■ Absolute Maximum Ratings
PARAMETER
Symbol
UNIT
MJU07N60CT


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