A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL

MAXIM

UNITS

µA

2.0

V

0.29

V

2.0

mA

2.0

µA

f = 1.0 MHz

.27

pF

NF

f = 30 GHz

6.0

dB

SILICON SCHOTTKY BARRIER DIODE

BAT38

PACKAGE STYLE

DESCRIPTION:

The

barrier mixer diode, Designed for use

in Ka frequency band Applications.

FEATURES INCLUDE:

• Low R

S

Ω

• Low NF 8.5 Db Typ.

• Frequency Range 26 to 40 GHz

• Available as Matched pairs by adding

the MP to the part number. Matching

criteria is

± 10% on rectified current

and within 150

Ω i.f. impedance.

MAXIMUM RATINGS

2.0 V

-55 °C to +100 °C

-55 °C to +100 °C