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PESD1LIN Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD1LIN Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 9397 750 14032 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 26 October 2004 4 of 12 Philips Semiconductors PESD1LIN LIN bus ESD protection diode in SOD323 6. Characteristics [1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Figure 1. Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse stand-off voltage PESD1LIN (15 V) - - 15 V PESD1LIN (24 V) - - 24 V IRM reverse leakage current PESD1LIN (15 V) VRWM = 15 V - < 1 50 nA PESD1LIN (24 V) VRWM = 24 V - < 1 50 nA V(BR) breakdown voltage IR = 5 mA PESD1LIN (15 V) 17.1 18.9 20.3 V PESD1LIN (24 V) 25.4 27.8 30.3 V Cd diode capacitance VR = 0 V; f = 1 MHz - 13 17 pF V(CL)R clamping voltage [1] PESD1LIN (15 V) IPP = 1 A - - 25 V IPP = 5 A - - 44 V PESD1LIN (24 V) IPP = 1 A - - 40 V IPP = 3 A - - 70 V rdif differential resistance PESD1LIN (15 V) IR = 1 mA - - 225 Ω PESD1LIN (24 V) IR = 1 mA - - 300 Ω |
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