| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 SEMTECH ELECTRONICS LTD... |
1SS367
|
174Kb/3P
|
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
 Toshiba Semiconductor |
1SS367
|
122Kb/2P
|
DIODE (HIGH SPEED SWITCHING APPLICATION)
|
|
1SS367
|
215Kb/3P
|
High Speed Switching Application
|
 Guangdong Kexin Industr... |
1SS367
|
32Kb/1P
|
HIGH SPEED SWITCHING APPLICATION
|
 Shenzhen Ping Sheng Ele... |
1SS367
|
215Kb/3P
|
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
 Toshiba Semiconductor |
1SS367
|
215Kb/3P
|
High Speed Switching Application
|
|
1SS367
|
224Kb/3P
|
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
| Search Partnumber :
Start with "1SS367" -
Total : 28 ( 1/2 Page) |
 Toshiba Semiconductor |
1SS360
|
129Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
|
1SS360
|
218Kb/3P |
Ultra High Speed Switching Application
|
 Shanghai Leiditech Elec... |
1SS360
|
935Kb/3P |
Switching Diode
|
 Toshiba Semiconductor |
1SS360F
|
121Kb/3P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
 Shanghai Leiditech Elec... |
1SS360Q
|
934Kb/2P |
Fast Switching Diode
|
 Toshiba Semiconductor |
1SS360
|
218Kb/3P |
Ultra High Speed Switching Application
|
|
1SS361
|
117Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
|
1SS361
|
217Kb/3P |
Ultra High Speed Switching Application
|
|
1SS361
|
201Kb/3P |
Ultra High Speed Switching Application
|
|
1SS361CT
|
201Kb/3P |
Ultra High Speed Switching Application
|
|
1SS361F
|
242Kb/4P |
Ultra High Speed Switching Applications
|
|
1SS361FV
|
199Kb/4P |
Ultra-High-Speed Switching Applications
|