| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Toshiba Semiconductor |
2SC570
|
39Kb/1P
|
2SC790
|
 Hitachi Semiconductor |
2SC5700
|
102Kb/10P
|
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
 Renesas Technology Corp |
2SC5700
|
192Kb/9P
|
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
|
2SC5700WB-TR-E
|
192Kb/9P
|
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
 Hitachi Semiconductor |
2SC5702
|
109Kb/16P
|
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
 Renesas Technology Corp |
2SC5702
|
277Kb/15P
|
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
|
2SC5702ZS-TL-E
|
277Kb/15P
|
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
 Toshiba Semiconductor |
2SC5703
|
166Kb/5P
|
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
|
2SC5703
|
137Kb/5P
|
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
|
2SC5703
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
|
2SC5703
|
165Kb/5P
|
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2016-09-27
|
|
2SC5703
|
137Kb/5P
|
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
|
2SC5703
|
165Kb/5P
|
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2016-09-27
|
 Renesas Technology Corp |
2SC5704
|
343Kb/26P
|
NPN SILICON RF TRANSISTOR
2001
|
|
2SC5704-T3
|
343Kb/26P
|
NPN SILICON RF TRANSISTOR
2001
|
 ON Semiconductor |
2SC5706
|
424Kb/10P
|
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
September, 2013
|
 Sanyo Semicon Device |
2SC5706
|
40Kb/5P
|
High Current Switching Applications
|
 Weitron Technology |
2SC5706
|
190Kb/5P
|
NPN EPITAXIAL PLANAR TRANSISTOR
|
 Sanyo Semicon Device |
2SC5706
|
67Kb/5P
|
High Current Switching Applications
|
|
2SC5706
|
507Kb/10P
|
High-Current Switching Applications
|