| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Hitachi Semiconductor |
2SH20
|
43Kb/8P
|
Silicon N-Channel IGBT
|
 Toshiba Semiconductor |
2SH20
|
146Kb/4P
|
SILICON P EMITTER PLANAR TYPE
|
 Hitachi Semiconductor |
2SH21
|
43Kb/8P
|
Silicon N-Channel IGBT
|
 Toshiba Semiconductor |
2SH21
|
146Kb/4P
|
SILICON P EMITTER PLANAR TYPE
|
 Hitachi Semiconductor |
2SH22
|
42Kb/8P
|
Silicon N-Channel IGBT
|
|
2SH26
|
43Kb/8P
|
Silicon N Channel IGBT High Speed Power Switching
|
 Renesas Technology Corp |
2SH26
|
171Kb/10P
|
Silicon N Channel IGBT High Speed Power Switching
|
 Hitachi Semiconductor |
2SH27
|
42Kb/8P
|
Silicon N Channel IGBT High Speed Power Switching
|
 Renesas Technology Corp |
2SH27
|
171Kb/10P
|
Silicon N Channel IGBT High Speed Power Switching
|
 Hitachi Semiconductor |
2SH28
|
43Kb/8P
|
Silicon N Channel IGBT High Speed Power Switching
|
 Renesas Technology Corp |
2SH28
|
171Kb/10P
|
Silicon N Channel IGBT High Speed Power Switching
|
 Hitachi Semiconductor |
2SH29
|
43Kb/8P
|
Silicon N Channel IGBT High Speed Power Switching
|
 Renesas Technology Corp |
2SH29
|
172Kb/10P
|
Silicon N Channel IGBT High Speed Power Switching
|