| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Ohmite Mfg. Co. |
30J100
|
236Kb/3P
|
High Energy Wirewound
|
Toshiba Semiconductor |
30J101
|
193Kb/6P
|
Silicon N Channel IGBT High Power Switching Applications
|
|
30J121
|
294Kb/6P
|
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
|
30J122
|
498Kb/6P
|
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
|
30J122A
|
199Kb/7P
|
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
|
|
30J124
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
|
30J126
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
AG Electronica |
30J127
|
226Kb/2P
|
MOSFET 600V 200A IGBT
|
Ohmite Mfg. Co. |
30J150
|
236Kb/3P
|
High Energy Wirewound
|
|
30J15R
|
236Kb/3P
|
High Energy Wirewound
|
|
30J27R
|
236Kb/3P
|
High Energy Wirewound
|
Vishay Siliconix |
30J2C000
|
133Kb/7P
|
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17
|
Ohmite Mfg. Co. |
30J2R0
|
236Kb/3P
|
High Energy Wirewound
|
Toshiba Semiconductor |
30J301
|
329Kb/6P
|
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
30J311
|
328Kb/6P
|
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
30J322
|
257Kb/5P
|
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Ohmite Mfg. Co. |
30J33R
|
236Kb/3P
|
High Energy Wirewound
|
Vishay Siliconix |
30J4B000
|
133Kb/7P
|
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17
|
|
30J4C000
|
133Kb/7P
|
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17
|
Ohmite Mfg. Co. |
30J4R7
|
236Kb/3P
|
High Energy Wirewound
|
Mexican ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
British
New Zealand