| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Intersil Corporation |
FSYC360D1
|
77Kb/8P
|
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
February 2000
|
| Search Partnumber :
Start with "FSYC360D1" -
Total : 53 ( 1/3 Page) |
 Intersil Corporation |
FSYC360D
|
77Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
February 2000 |
|
FSYC360R
|
77Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
February 2000 |
|
FSYC360R3
|
77Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
February 2000 |
|
FSYC360R4
|
77Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
February 2000 |
|
FSYC055D
|
49Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
|
FSYC055D1
|
49Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
|
FSYC055D3
|
49Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
|
FSYC055R
|
49Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
|
FSYC055R1
|
49Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
|
FSYC055R3
|
49Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
|
FSYC055R4
|
49Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998 |
|
FSYC160D
|
49Kb/8P |
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
July 1998 |
|
FSYC160D1
|
49Kb/8P |
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
July 1998 |
|
FSYC160D3
|
49Kb/8P |
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
July 1998 |
|
FSYC160R
|
49Kb/8P |
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
July 1998 |
|
FSYC160R1
|
49Kb/8P |
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
July 1998 |
|
FSYC160R3
|
49Kb/8P |
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
July 1998 |
|
FSYC160R4
|
49Kb/8P |
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
July 1998 |
|
FSYC163D
|
61Kb/8P |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
May 1999 |