| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Shenzhen Huazhimei Semi... |
HM233LE
|
1Mb/7P
|
Single button touch switch IC
|
| Search Partnumber :
Start with "HM233LE" -
Total : 47 ( 1/3 Page) |
 Shenzhen Huazhimei Semi... |
HM233LD
|
1Mb/9P |
Single button touch switch IC
|
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HM233LG
|
1Mb/9P |
Single button touch switch IC
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HM233B
|
1Mb/12P |
TWS Bluetooth headset dedicated touch IC
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|
HM233BD
|
1Mb/12P |
TWS Bluetooth headset dedicated touch IC
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HM233BT
|
1Mb/12P |
TWS Bluetooth headset dedicated touch IC
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|
HM233C
|
1Mb/9P |
Single touch single output IC
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|
HM233D
|
660Kb/8P |
Single touch control chip
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HM233G
|
1Mb/11P |
Single touch synchronous CMOS output IC
|
 VBsemi Electronics Co.,... |
HM2300
|
1Mb/9P |
N-Channel 20 V (D-S) MOSFET
|
 Shenzhen Huazhimei Semi... |
HM2300PR
|
1Mb/8P |
N-Channel Enhancement Mode Power MOSFET
|
 List of Unclassifed Man... |
HM2301B
|
809Kb/7P |
P-Channel Enhancement Mode Power MOSFET
|
 Shenzhen Huazhimei Semi... |
HM2301BWKR
|
411Kb/6P |
Dual P-Channel Enhancement Mode Field Effect Transistor
|
|
HM2301F
|
984Kb/7P |
P-Channel Enhancement Mode Power MOSFET
|
 VBsemi Electronics Co.,... |
HM2301KR
|
1Mb/9P |
P-Channel 20 V (D-S) MOSFET
|
 Shenzhen Huazhimei Semi... |
HM2302A
|
503Kb/7P |
N-Channel Enhancement Mode Power MOSFET
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HM2302BWKR
|
336Kb/3P |
Low On resistance
|
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HM2302BWSR
|
199Kb/5P |
Dual N-Channel Digital FET
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HM2302F
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886Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
|
HM2305A
|
637Kb/7P |
P-Channel Enhancement Mode Power MOSFET
|