| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Polyfet RF Devices |
P281
|
38Kb/2P
|
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
Alliance Semiconductor ... |
P2811
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
ON Semiconductor |
P2811A
|
136Kb/6P
|
Low Power EMI Reduction IC
JUNE 2011 ??Rev. 2
|
Alliance Semiconductor ... |
P2811A-08SR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2811A-08ST
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2811A-08TR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2811A-08TT
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2811AF-08SR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2811AF-08ST
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2811AF-08TR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2811AF-08TT
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
ON Semiconductor |
P2811B
|
136Kb/6P
|
Low Power EMI Reduction IC
JUNE 2011 ??Rev. 2
|
|
P2812A
|
136Kb/6P
|
Low Power EMI Reduction IC
JUNE 2011 ??Rev. 2
|
Alliance Semiconductor ... |
P2812A-08SR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2812A-08ST
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2812A-08TR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2812A-08TT
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2812AF-08SR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2812AF-08ST
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
|
P2812AF-08TR
|
382Kb/8P
|
Low-Power EMI Reduction IC
|
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